2N3956 |
Part Number | 2N3956 |
Manufacturer | Micross |
Description | 2N3956 MONOLITHIC DUAL N-CHANNEL JFET The 2N3956 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3956 family are matched JFET pairs for differential amplifiers. The 2N3956 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3956. |
Features |
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3956 Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total . |
Datasheet |
2N3956 Data Sheet
PDF 307.40KB |
Distributor | Stock | Price | Buy |
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2N3956 |
Part Number | 2N3956 |
Manufacturer | Siliconix |
Title | monolithic dual n-channel JFET |
Description | .monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for • • • • Low and Medium Frequency DiHerential Amplifiers • High Input Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25°C) BENEFITS • Wide Dynamic Range IG Specified @ V DS = 20 V • Low Capacitance Ciss. |
Features | i~ I...E... 13 D I-V 14 N I-~ 15 I I-C 16 1- 17 IGSS BVGSS VGS(off) VGS(f) VGS IG lOSS IVI,I 9o, CISS Crss Cdgo NF Gate Reverse Current Gate-Source tsreakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Com. |
2N3956 |
Part Number | 2N3956 |
Manufacturer | National Semiconductor |
Title | N-Channel Monolithic Dual JFETs |
Description | The 2N3956 thru 2N3958 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring tight match, low noise and high common-mode rejection. Absolute Maximum Ratings (250 Gate-Drain or Gate- Source Voltage —50V Gate-to-Gate Voltage. |
Features | V(3s PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage q Gate Operating Current IqSS 1 Vfsi g os C iss C(-|g NF i'G1- 'G2: l DSSl'lDSS2 ivqsi v GS2 : A.VqsI- V GS2< 9fsV9fs2 Saturation Drain Current Common-Source Forward TTranscond.uct,ance Common-Source Output Conductance Common-Source Input Capacitance Co. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3950 |
Motorola |
NPN silicon RF power transistor | |
2 | 2N3954 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
3 | 2N3954 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
4 | 2N3954 |
Siliconix |
monolithic dual n-channel JFET | |
5 | 2N3954A |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
6 | 2N3954A |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
7 | 2N3954A |
Siliconix |
monolithic dual n-channel JFET | |
8 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor | |
9 | 2N3955 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
10 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |