Busque con el número de pieza junto con el fabricante o la descripción
2N3958 |
Click to view a larger image
| Part Number | 2N3958 |
| Manufacturer | Micross |
| Description | 2N3958 MONOLITHIC DUAL N-CHANNEL JFET The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3958 family are matched JFET pairs for differential amplifiers. The 2N3958 family of general purpose JFETs is characterized for low and medium frequency differential amplifiers requiring low offset voltage, drift, noise and capacitance The 2N3958. |
| Features |
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20pA TYP. en = 10nV/√Hz TYP.
2N3958 Applications:
Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total . |
| Datasheet |
 2N3958 Data Sheet
PDF 307.50KB |
| Distributor | Stock | Price | Buy |
|---|
2N3958 |
| Part Number | 2N3958 |
| Manufacturer | Siliconix |
| Title | monolithic dual n-channel JFET |
| Description | .monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for • • • • Low and Medium Frequency DiHerential Amplifiers • High Input Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25°C) BENEFITS • Wide Dynamic Range IG Specified @ V DS = 20 V • Low Capacitance Ciss. |
| Features | i~ I...E... 13 D I-V 14 N I-~ 15 I I-C 16 1- 17 IGSS BVGSS VGS(off) VGS(f) VGS IG lOSS IVI,I 9o, CISS Crss Cdgo NF Gate Reverse Current Gate-Source tsreakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage Gate Operating Current Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Com. |
2N3958 |
| Part Number | 2N3958 |
| Manufacturer | Vishay |
| Title | Monolithic N-Channel JFET |
| Description | The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetic. |
| Features | D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise: 9 nV⁄√Hz D High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideb. |
2N3958 |
| Part Number | 2N3958 |
| Manufacturer | Solitron Devices |
| Title | Dual Matched N-Channel JFET |
| Description | The -50V 2N3957 and 2N3958 matched pair JFET’s are targeted for high input impedance applications for mid to high frequency designs. Gate leakages are typically 10pA at room temperatures. Parts are matched down to 5mV. The TO-71 package is hermetically sealed and suitable for military applications. . |
| Features | TYPICAL NOISE: 6 NV/√HZ LOW CISS: 3.5PF TYPICAL HIGH INPUT IMPEDANCE REPLACEMENT FOR OTHER 2N3957,8 PARTS Source Case 5 Gate 3 6 Drain 7 Gate DESCRIPTION The -50V 2N3957 and 2N3958 matched pair JFET’s are targeted for high input impedance applications for mid to high frequency designs. Gate leakages are typically 10pA at room temperatures. Parts are matched down to 5mV. The TO-71 package is . |
2N3958 |
| Part Number | 2N3958 |
| Manufacturer | National Semiconductor |
| Title | N-Channel Monolithic Dual JFETs |
| Description | The 2N3956 thru 2N3958 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring tight match, low noise and high common-mode rejection. Absolute Maximum Ratings (250 Gate-Drain or Gate- Source Voltage —50V Gate-to-Gate Voltage. |
| Features | V(3s PARAMETER Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Forward Voltage Gate-Source Voltage q Gate Operating Current IqSS 1 Vfsi g os C iss C(-|g NF i'G1- 'G2: l DSSl'lDSS2 ivqsi v GS2 : A.VqsI- V GS2< 9fsV9fs2 Saturation Drain Current Common-Source Forward TTranscond.uct,ance Common-Source Output Conductance Common-Source Input Capacitance Co. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3950 |
Motorola |
NPN silicon RF power transistor |
|
| 2 | 2N3954 |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 3 | 2N3954 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |
|
| 4 | 2N3954 |
Siliconix |
monolithic dual n-channel JFET |
|
| 5 | 2N3954A |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 6 | 2N3954A |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |
|
| 7 | 2N3954A |
Siliconix |
monolithic dual n-channel JFET |
|
| 8 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor |
|
| 9 | 2N3955 |
National Semiconductor |
N-Channel Monolithic Dual JFETs |
|
| 10 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET |
|
Desde 2024. D4U Semiconductor.
|