NXP MRF Hoja de datos

No.	parte #	Fabricante	Descripción
1	MRF300AN	NXP	RF Power LDMOS Transistors D G  Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration S  Characterized from 30 to 50 V  Suitable for linear application  Integrated ESD protection with greater negative gate--source voltage range for
2	MRFE6VP61K25N	NXP	RF Power LDMOS Transistors  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Device can be used Single--Ended or in a Push--Pull Configuration  Qualified up to a Maximum of 50 VDD Operation  Characterized from 30 to 50 V for Extended Power Range  Sui
3	MRF8S9200NR3	NXP	RF Power Field Effect Transistor • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gat
4	MRF6V12500H	NXP	RF Power LDMOS Transistors  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Qualified up to a Maximum of 50 VDD Operation  Integrated ESD Protection  Greater Negative Gate--Source Voltage Range for Improved Clas
5	MRF6V2300NBR1	NXP	RF Power FET • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm
6	MRF6VP11KGSR5	NXP	RF Power FET • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negati
7	MRFE6VS25NR1	NXP	RF Power LDMOS Transistors  Wide operating frequency range  Extreme ruggedness  Unmatched, capable of very broadband operation  Integrated stability enhancements  Low thermal resistance  Extended ESD protection circuit  2012, 2019 NXP B.V. RF Device Data NXP Semiconduc
8	MRF21060LSR3	NXP	RF Power Field Effect Transistors • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Si
9	MRF24300N	NXP	RF Power LDMOS Transistor • Characterized with series equivalent large--signal impedance parameters • Internally matched for ease of use • Qualified for operation at 32 Vdc • Integrated ESD prote
10	MRF21060LR3	NXP	RF Power Field Effect Transistors • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Si
11	MRF6V12500GS	NXP	RF Power LDMOS Transistors  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Qualified up to a Maximum of 50 VDD Operation  Integrated ESD Protection  Greater Negative Gate--Source Voltage Range for Improved Clas
12	MRF24G300H	NXP	RF Power GaN Transistors  Advanced GaN on SiC, for optimal thermal performance  Characterized for CW, long pulse (up to several seconds) and short pulse operations  Device can be used in a single--ended or push--pull configuration  Input matched for simplified input circ
13	MRF6VP3450HR5	NXP	RF Power FET • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Input Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Ga
14	MMRF5018HS	NXP	RF Power GaN Transistor • Advanced GaN on SiC, offering high power density • Decade bandwidth performance • Enhanced thermal resistance packaging • Input matched for extended wideband performance • High ruggedness: > 20:1 VSWR Typical Applications • Ideal for military end−
15	MRF13750H	NXP	RF Power LDMOS Transistors  Internally input pre--matched for ease of us
16	MRF13750HS	NXP	RF Power LDMOS Transistors  Internally input pre--matched for ease of us
17	MRFE6VS25GNR1	NXP	RF Power LDMOS Transistors  Wide operating frequency range  Extreme ruggedness  Unmatched, capable of very broadband operation  Integrated stability enhancements  Low thermal resistance  Extended ESD protection circuit  2012, 2019 NXP B.V. RF Device Data NXP Semiconduc
18	MRF300BN	NXP	RF Power LDMOS Transistors D G  Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration S  Characterized from 30 to 50 V  Suitable for linear application  Integrated ESD protection with greater negative gate--source voltage range for
19	MMRF5017HS	NXP	RF Power GaN Transistor
20	MRF8S21140HR3	NXP	RF Power Field Effect Transistors