MRFE6VS25GNR1 NXP Transistors, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

MRFE6VS25GNR1

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Part Number	MRFE6VS25GNR1
Manufacturer	NXP (https://www.nxp.com/)
Description	NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadca...
Features	 Wide operating frequency range  Extreme ruggedness  Unmatched, capable of very broadband operation  Integrated stability enhancements  Low thermal resistance  Extended ESD protection circuit  2012, 2019 NXP B.V. RF Device Data NXP Semiconductors Document Number: MRFE6VS25N Rev. 2, 03/2019 MRFE6VS25NR1 MRFE6VS25GNR1 1.8--2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS TO--270--2 PLASTIC MRFE6VS25NR1 TO--270G--2 PLASTIC MRFE6VS25GNR1 Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections MRFE6VS25NR...
Document	MRFE6VS25GNR1 Data Sheet PDF 1.60MB

No.	Parte #	Fabricante	Descripción
1	MRFE6VS25NR1	NXP	RF Power LDMOS Transistors
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