MRF6V12500H |
Part Number | MRF6V12500H |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies betwe... |
Features |
Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Document Number: MRF6V12500H Rev. 5, 7/2016 MRF6V12500H MRF6V12500HS MRF6V12500GS 960--1215 MHz, 500 W, 50 V PULSE RF POWER LDMOS TRANSISTORS NI--780H--2L MRF6V12500H NI--780S--2L MRF6V12500HS NI--780GS--2L MRF6V12500GS Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1.... |
Document |
MRF6V12500H Data Sheet
PDF 805.20KB |
Similar Datasheet
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