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MRF8S9200NR3 |
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| Part Number | MRF8S9200NR3 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applica... |
| Features |
• 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. CASE 2021--03, STYLE 1 OM--780--2 PLASTIC Table 1. Maximum Ratings Rating Sy... |
| Document |
 MRF8S9200NR3 Data Sheet
PDF 533.12KB |
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