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MRF300BN |
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| Part Number | MRF300BN |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial,... |
| Features |
D G
Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration S Characterized from 30 to 50 V Suitable for linear application Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Typical Applications Industrial, scientific, medical (ISM) – Laser generation – Plasma etching – Particle accelerators – MRI and other medical applications – Industrial heating, welding and drying systems Radio an... |
| Document |
 MRF300BN Data Sheet
PDF 1.25MB |
Similar Datasheet
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| 1 | MRF300AN |
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| 2 | MRF3010 |
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| 6 | MRF3105 |
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