| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
NXP |
N-Channel MOSFET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ44N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON |
|
|
|
|
NXP |
N-Channel MOSFET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ44NS QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(O |
|
|
|
|
NXP |
PowerMOS transistor • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance IRFP460 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 20 A RDS(ON) ≤ 0.27 Ω s GENERAL DESCRIPTION N- |
|
|
|
|
NXP |
PowerMOS transistor • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A RDS(ON) ≤ 1 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect |
|
|
|
|
NXP |
N-Channel MOSFET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ48N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON |
|
|
|
|
NXP |
Airfast RF Power GaN Transistor and benefits • High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low c |
|
|
|
|
NXP |
Airfast RF Power GaN Transistor • High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low complexity line |
|
|
|
|
NXP |
Airfast RF Power GaN Transistor • High terminal impedances for optimal broadband performance • Designed for low complexity linearization systems • Universal broadband driver • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S0 |
|
|
|
|
NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a p |
|
|
|
|
NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a p |
|
|
|
|
NXP |
N-channel enhancement mode TrenchMOS transistor very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON |
|
|
|
|
NXP |
Airfast Power Amplifier and benefits • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Designed for low complexity digital linearization systems • Autobias on power up • Temperature sensing • I2C digital interface • Embedded |
|
|
|
|
NXP |
Airfast Power Amplifier • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in−package Doherty • Thermal path is separated from electrical/solder connection path for enhanced thermal dis |
|
|
|
|
NXP |
Airfast RF Power GaN Transistor and benefits • High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broad |
|
|
|
|
NXP |
Airfast Power Amplifier Module and benefits • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in-package Doherty • Thermal path is separated from electrical/solder connection path for enhanc |
|
|
|
|
NXP |
Airfast Power Amplifier Module and benefits • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in-package Doherty • Thermal path is separated from electrical/solder connection path for enhanc |
|
|
|
|
NXP |
Airfast Power Amplifier Module and benefits • 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Reduced memory effe |
|
|
|
|
NXP |
Airfast RF Power GaN Transistor • High terminal impedances for optimal broadband performance • Advanced high performance in−package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operatin |
|
|
|
|
NXP |
Airfast Power Amplifier Module and benefits • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Designed for low complexity digital linearization systems • Autobias on power up • Temperature sensing • I2C digital interface • Embedded |
|
|
|
|
NXP |
Airfast Power Amplifier and benefits • Advanced high performance in-package Doherty • Fully matched (50 ohm input/output, DC blocked) • Designed for low complexity digital linearization systems • Autobias on power up • Temperature sensing • I2C digital interface • Embedded |
|
Desde 2024. D4U Semiconductor.
|