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A5G23H065N |
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| Part Number | A5G23H065N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | A5G23H065N Airfast RF Power GaN Transistor Rev. 1 — November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instan... |
| Features |
• High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low complexity linearization systems • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G23H065N 2300 –2400 MHz, 8.8 W Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR DFN 7 × 6.5 PLASTIC VGSA 1 N.C. 2 6 VDSA 5 N.C. VGSB 3 4 VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transist... |
| Document |
 A5G23H065N Data Sheet
PDF 187.01KB |
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Desde 2024. D4U Semiconductor.
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