Busque con el número de pieza junto con el fabricante o la descripción
A5G19H605W19N |
Click to view a larger image
| Part Number | A5G19H605W19N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performanc. |
| Features |
• High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package 3 Typical performance Table 1. 1900 MHz — Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF[1] Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 1930 MHz 16.3 54. |
| Datasheet |
 A5G19H605W19N Data Sheet
PDF 485.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A5G23H065N |
NXP |
Airfast RF Power GaN Transistor |
|
| 2 | A5G26H605W19N |
NXP |
Airfast RF Power GaN Transistor |
|
| 3 | A5G35H120N |
NXP |
Airfast RF Power GaN Transistor |
|
| 4 | A5G35S004N |
NXP |
Airfast RF Power GaN Transistor |
|
| 5 | A5G35S008N |
NXP |
Airfast RF Power GaN Transistor |
|
| 6 | A5G38H045N |
NXP |
Airfast RF Power GaN Transistor |
|
| 7 | A5-5 |
MA-COM |
Cascadable Amplifier |
|
| 8 | A500 |
Powerex Power Semiconductors |
SILICON RECTIFIER |
|
| 9 | A5000 |
NXP |
EdgeLock Secure Authenticator |
|
| 10 | A500K050 |
Actel |
System Gates |
|
Desde 2024. D4U Semiconductor.
|