Busque con el número de pieza junto con el fabricante o la descripción
A5G26H605W19N |
Click to view a larger image
| Part Number | A5G26H605W19N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | A5G26H605W19N Airfast RF Power GaN Transistor Rev. 1 — 21 December 2023 This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide i... |
| Features |
• High terminal impedances for optimal broadband performance • Advanced high performance in−package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package Product data sheet A5G26H605W19N 2496 –2690 MHz, 85 W Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR OM−780−4S4S PLASTIC VBWinA/VGSA 1 RFinA/VGSA 2 Carrier 8 VBWoutA 7 RFoutA/VDSA RFinB/VGSB 3 6 RFoutB/VDSB NC 4 Peaking 5 NC (Top view) Note: Exposed backside of the package is the source terminal for the transist... |
| Document |
 A5G26H605W19N Data Sheet
PDF 198.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | A5G23H065N |
NXP |
Airfast RF Power GaN Transistor |
|
| 2 | A5G19H605W19N |
NXP |
Airfast RF Power GaN Transistor |
|
| 3 | A5G35H120N |
NXP |
Airfast RF Power GaN Transistor |
|
| 4 | A5G35S004N |
NXP |
Airfast RF Power GaN Transistor |
|
| 5 | A5G35S008N |
NXP |
Airfast RF Power GaN Transistor |
|
| 6 | A5G38H045N |
NXP |
Airfast RF Power GaN Transistor |
|
Desde 2024. D4U Semiconductor.
|