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A5G19H605W19N |
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| Part Number | A5G19H605W19N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to... |
| Features |
• High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package 3 Typical performance Table 1. 1900 MHz — Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF[1] Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 1930 MHz 16.3 54... |
| Document |
 A5G19H605W19N Data Sheet
PDF 485.05KB |
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Desde 2024. D4U Semiconductor.
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