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A5G35H120N |
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| Part Number | A5G35H120N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to... |
| Features |
• High terminal impedances for optimal broadband performance • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Designed for low complexity linearization systems • Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz — Typical Doherty single-carrier W-CDMA reference circuit performance VCDCDD=F.4[18] Vdc, IDQA = 70 mA, VGSB = –4.0 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on Frequency Gps (dB) ηD Ou... |
| Document |
 A5G35H120N Data Sheet
PDF 402.47KB |
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Desde 2024. D4U Semiconductor.
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