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Matsuki |
N-Channel 100-V (D-S) MOSFET ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell dens |
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Matsuki |
1A Low Dropout Voltage Regulator 1. 1.8V, 2.5V, 3.3V, 5.0V, and Adjustable Output 2. Output Current of 1A 3. Operates Down to 1V Dropout 4. Line Regulation : 0.2% Max 5. Output Voltage Tolerance:2% max 6. SOT-223, TO-252 and TO-263 package available. APPLICATIONS 1. High E |
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Matsuki |
N-Channel 250V (D-S) MOSFET ● RDS(ON)≦265mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) T |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦150mΩ@VGS=10V ● RDS(ON)≦250mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * Th Ordering In |
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Matsuki |
N-Channel 250V (D-S) MOSFET ● RDS(ON)≦265mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) T |
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Matsuki |
N-Channel 100-V (D-S) MOSFET ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell dens |
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Matsuki |
N-Channel 250V (D-S) MOSFET ● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO- |
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Matsuki |
N-Channel 100V (D-S) MOSFET ● RDS(ON) ≦145mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● DC/DC Converter ● Load Switch ● LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦345mΩ@VGS=10V ● RDS(ON)≦365mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● L |
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Matsuki |
P-Channel 20V (D-S) MOSFET ● RDS(ON) ≦95mΩ@VGS=-4.5V ● RDS(ON) ≦120mΩ@VGS=-2.5V ● RDS(ON) ≦180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Po |
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Matsuki |
N-Channel 40-V (D-S) MOSFET ● RDS(ON)=28mΩ@VGS=10V (N-Ch) ● RDS(ON)=52mΩ@VGS=4.5V (N-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● |
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Matsuki |
1A Low Dropout Voltage Regulator 1. 1.8V, 2.5V, 3.3V, 5.0V, and Adjustable Output 2. Output Current of 1A 3. Operates Down to 1V Dropout 4. Line Regulation : 0.2% Max 5. Output Voltage Tolerance:2% max 6. SOT-223, TO-252 and TO-263 package available. APPLICATIONS 1. High E |
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Matsuki |
P-Channel 100V (D-S) MOSFET ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Ex |
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Matsuki |
P-Channel 100V (D-S) MOSFET ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Ex |
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Matsuki |
N-Channel 250V (D-S) MOSFET ● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO- |
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Matsuki |
P-Channel 20V (D-S) MOSFET ● RDS(ON) ≦95mΩ@VGS=-4.5V ● RDS(ON) ≦120mΩ@VGS=-2.5V ● RDS(ON) ≦180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Po |
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Matsuki |
P-Channel Enhancement Mode Mosfet ● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Powe |
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Matsuki |
P-Channel 20V (D-S) MOSFET ● RDS(ON) ≦95mΩ@VGS=-4.5V ● RDS(ON) ≦120mΩ@VGS=-2.5V ● RDS(ON) ≦180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Po |
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Matsuki |
P-Channel Enhancement Mode Mosfet ● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Powe |
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Matsuki |
N-Channel 20V (D-S) MOSFET ● RDS(ON) ≦ 65 mΩ @VGS=4.5V ● RDS(ON) ≦ 80 mΩ @VGS=2.5V ● RDS(ON) ≦ 95 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book |
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Desde 2024. D4U Semiconductor.
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