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ME16P10 |
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| Part Number | ME16P10 |
| Manufacturer | Matsuki |
| Description | The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES ● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V techn... |
| Features |
● RDS(ON)≦195mΩ@VGS=-10V ● RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION APPLICATIONS ● Power Management in Note book ● DC/DC Conve... |
| Document |
 ME16P10 Data Sheet
PDF 1.05MB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | ME16P10-G |
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| 2 | ME100N03T |
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| 3 | ME100N03T-G |
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| 4 | ME100N15T-G |
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| 6 | ME10N15-G |
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Desde 2024. D4U Semiconductor.
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