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ME1304AT3-G |
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| Part Number | ME1304AT3-G |
| Manufacturer | Matsuki |
| Description | The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to ... |
| Features |
● RDS(ON) ≦ 65 mΩ @VGS=4.5V ● RDS(ON) ≦ 80 mΩ @VGS=2.5V ● RDS(ON) ≦ 95 mΩ @VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC Ordering Information: ME1304AT3 (Pb-free) ME1304AT3-G... |
| Document |
 ME1304AT3-G Data Sheet
PDF 1.43MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME1304AT3 |
Matsuki |
N-Channel 20V (D-S) MOSFET |
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| 2 | ME1303 |
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| 3 | ME1303-G |
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P-Channel 20V (D-S) MOSFET |
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| 4 | ME1303AT3 |
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| 5 | ME1303AT3-G |
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P-Channel Enhancement Mode Mosfet |
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| 6 | ME1303S |
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P-Channel 20V (D-S) MOSFET |
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Desde 2024. D4U Semiconductor.
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