ME1303AT3-G |
Part Number | ME1303AT3-G |
Manufacturer | Matsuki |
Description | The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to ... |
Features |
● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Swi... |
Document |
ME1303AT3-G Data Sheet
PDF 965.01KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ME1303AT3 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
2 | ME1303 |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
3 | ME1303-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
4 | ME1303S |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
5 | ME1303S-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
6 | ME1304AT3 |
Matsuki |
N-Channel 20V (D-S) MOSFET |