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ME15N25F-G |
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| Part Number | ME15N25F-G |
| Manufacturer | Matsuki |
| Description | The ME15N25F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on st... |
| Features |
● RDS(ON)≦220mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Ordering Information: ME15N25F (Pb-free) ME15N25F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Symbol VDS VGS ID Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ IDM PD Junctio... |
| Document |
 ME15N25F-G Data Sheet
PDF 892.23KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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