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International Rectifier |
IRF9Z24N TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
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International Rectifier |
Power MOSFET R EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanch |
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International Rectifier |
POWER MOSFET |
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International Rectifier |
Power MOSFET ate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25 |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET " Note: "P" in as s embly line pos ition indicates "Lead-Free" INTE RNATIONAL RECT IFIER LOGO AS SEMBLY LOT CODE OR INT ERNAT IONAL RECT IF IER L OGO AS S E MB LY LOT CODE www.irf.com PART NUMBER DAT E CODE YEAR 7 = 1997 WE EK 19 LINE C PART NUM |
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International Rectifier |
Power MOSFET EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche |
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International Rectifier |
MOSFET ackage Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASSE MBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" |
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International Rectifier |
IRF9Z34NS sistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM P |
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International Rectifier |
Power MOSFET l l l l l l l l l Advanced Planar Technology P-Channel MOSFET Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* HEXFET® Pow |
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International Rectifier |
Power MOSFET |
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International Rectifier |
IRF9Z34NL sistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM P |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z14L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET ate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25 |
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International Rectifier |
Power MOSFET pate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 2 |
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International Rectifier |
Power MOSFET sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC |
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International Rectifier |
Power MOSFET pate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 2 |
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International Rectifier |
HEXFET Power MOSFET and 3V Drive Devices Fig 14. For P-channel HEXFETS www.irf.com 7 www.DataSheet4U.com IRF9Z24NPbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in m |
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Desde 2024. D4U Semiconductor.
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