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F9Z34NS |
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| Part Number | F9Z34NS |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -55V RDS(on) = 0.10Ω G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... |
| Features |
sistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ -10V
Continuous Drain Current, V GS @ -10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
... |
| Document |
 F9Z34NS Data Sheet
PDF 169.14KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | F9Z34NL |
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| 2 | F9Z24N |
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| 3 | F900B |
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| 4 | F900BJ |
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| 6 | F9020 |
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Desde 2024. D4U Semiconductor.
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