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IRF9Z14S |
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| Part Number | IRF9Z14S |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -60V RDS(on) = 0.50Ω G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar... |
| Features |
sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z14L) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and S... |
| Document |
 IRF9Z14S Data Sheet
PDF 361.79KB |
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