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IRF9Z24NS |
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| Part Number | IRF9Z24NS |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar... |
| Features |
sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction an... |
| Document |
 IRF9Z24NS Data Sheet
PDF 168.46KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9Z24N |
International Rectifier |
Power MOSFET |
|
| 2 | IRF9Z24NL |
International Rectifier |
Power MOSFET |
|
| 3 | IRF9Z24NLPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF9Z24NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF9Z24NSPbF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF9Z24 |
International Rectifier |
POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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