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IRF9Z24N |
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| Part Number | IRF9Z24N |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -55V RDS(on) = 0.175Ω G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar... |
| Features |
R EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-12 -8.5 -48 45 0.30 ± 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junctio... |
| Document |
 IRF9Z24N Data Sheet
PDF 109.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9Z24 |
International Rectifier |
POWER MOSFET |
|
| 2 | IRF9Z24L |
International Rectifier |
Power MOSFET |
|
| 3 | IRF9Z24L |
Vishay |
Power MOSFET |
|
| 4 | IRF9Z24NL |
International Rectifier |
Power MOSFET |
|
| 5 | IRF9Z24NLPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF9Z24NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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