Infineon Technologies AG BFY Hoja de datos

No.	parte #	Fabricante	Descripción
1	BFY196	Infineon Technologies AG	HiRel NPN Silicon RF Transistor tion temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 100 12 700 200 -65...+200 -65...+200 1) Unit V V V V
2	BFY180	Infineon Technologies AG	HiRel NPN Silicon RF Transistor 176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 8 15 15 2 4 0.5 30 200 -65...+200 -65...+200 1) Unit V
3	BFY181	Infineon Technologies AG	HiRel NPN Silicon RF Transistor ssipation, 2), 3) TS ≤ 137°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 20 2 1) Unit V V V V
4	BFY183	Infineon Technologies AG	HiRel NPN Silicon RF Transistor 4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec. No.: 5611/006 Type
5	BFY193	Infineon Technologies AG	HiRel NPN Silicon RF Transistor ssipation, 2), 3) TS ≤ 104°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Rth JS < 165 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spo
6	BFY405	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
7	BFY450	Infineon Technologies AG	HiRel NPN Silicon RF Transistor base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS ≤ 110°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2) Rth JS < 145 K/W Sy
8	BFY182	Infineon Technologies AG	HiRel NPN Silicon RF Transistor ssipation, 2), 3.) TS ≤ 136°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 35 4 1) Unit V V V
9	BFY420	Infineon Technologies AG	HiRel NPN Silicon RF Transistor tter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS ≤ 129°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point