BFY193 Infineon Technologies AG Transistor, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

BFY193

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Part Number	BFY193
Manufacturer	Infineon (https://www.infineon.com/) Technologies AG
Description	BFY193 HiRel NPN Silicon RF Transistor • • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microw...
Features	ssipation, 2), 3) TS ≤ 104°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Rth JS < 165 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 ...
Document	BFY193 Data Sheet PDF 394.35KB

No.	Parte #	Fabricante	Descripción
1	BFY193	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
2	BFY196	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
3	BFY196	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
4	BFY180	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
5	BFY180	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
6	BFY181	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)