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BFY181 |
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| Part Number | BFY181 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically seale... |
| Features |
ssipation, 2), 3) TS ≤ 137°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance
Junction-soldering point
3)
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg
Rth JS
Values 12 20 20 2 20 2
1)
Unit V V V V mA mA mW °C °C °C
K/W
175 200 -65...+200 -65...+200
< 360
Notes.: 1) The maximum permissible base current for VFBE measurements is 15mA (spotmeasurement duration < 1s) 2) At TS = + 137 °C. For TS > + 137 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unle... |
| Document |
 BFY181 Data Sheet
PDF 29.16KB |
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