BFY182 Semiconductor) Datasheet, Distribuidor, stock y mejor precio

Part Number	BFY182
Manufacturer	Infineon Technologies AG
Title	HiRel NPN Silicon RF Transistor
Description	BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 T.
Features	ssipation, 2), 3.) TS ≤ 136°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 35 4 1) Unit V V V V mA mA mW °C °C °C K/W 250 200 -65...+200 -65...+200 < 255 Notes.: 1) The maximum permissible base current for VFBE measurements is 20mA (spotmeas.

No.	Parte #	Fabricante	Descripción
1	BFY180	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
2	BFY180	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
3	BFY181	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
4	BFY181	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
5	BFY183	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor
6	BFY183	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
7	BFY193	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
8	BFY193	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
9	BFY196	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
10	BFY196	Infineon Technologies AG	HiRel NPN Silicon RF Transistor

BFY182 Datasheet. existencias, precio