BFY183 Transistor Datasheet, Distribuidor, stock y mejor precio

Part Number	BFY183
Manufacturer	Infineon Technologies AG
Title	HiRel NPN Silicon RF Transistor
Description	ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screeni.
Features	4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment .

No.	Parte #	Fabricante	Descripción
1	BFY180	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
2	BFY180	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
3	BFY181	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
4	BFY181	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
5	BFY182	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
6	BFY182	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
7	BFY193	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
8	BFY193	Infineon Technologies AG	HiRel NPN Silicon RF Transistor
9	BFY196	Siemens Semiconductor Group	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
10	BFY196	Infineon Technologies AG	HiRel NPN Silicon RF Transistor

BFY183 Datasheet. existencias, precio