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BFY450 |
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| Part Number | BFY450 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFY450 HiRel NPN Silicon RF Transistor • • • • • • • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8... |
| Features |
base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS ≤ 110°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2)
Rth JS < 145 K/W
Symbol VCEO VCBO VEBO IC IB Ptot Tj Top Tstg
Values 4.5 15 1.5 100 10 450 175 -65...+175 -65...+175
Unit V V V mA mA mW °C °C °C
Notes.: 1) At TS = + 110 °C. For TS > + 110 °C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter ... |
| Document |
 BFY450 Data Sheet
PDF 403.55KB |
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