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BFY180 |
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| Part Number | BFY180 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package ... |
| Features |
176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance
Junction-soldering point
3)
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg
Rth JS
Values 8 15 15 2 4 0.5 30 200 -65...+200 -65...+200
1)
Unit V V V V mA mA mW °C °C °C
K/W
< 805
Notes.: 1) The maximum permissible base current for VFBE measurements is 3mA (spotmeasurement duration < 1s) 2) At TS = + 176 °C. For TS > + 176 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Pa... |
| Document |
 BFY180 Data Sheet
PDF 29.14KB |
Similar Datasheet
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|---|---|---|---|---|
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