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Inchange Semiconductor |
2SD1308 ollector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V |
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Inchange Semiconductor |
Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB=0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -0.5 V VBE(on) Base-E |
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Inchange Semiconductor |
Silicon NPN Transistor )EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff |
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Inchange Semiconductor |
Power Transistor er Sustaining Voltage IC= 50mA; L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA ICBO Collector Cutoff |
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Inchange Semiconductor |
Power Transistor emi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Satura |
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Inchange Semiconductor |
Power Transistor IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emi |
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Inchange Semiconductor |
Silicon NPN Transistor EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff C |
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Inchange Semiconductor |
Silicon NPN Transistor eakdown Voltage IC= 30mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V |
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Inchange Semiconductor |
Silicon NPN Transistor D1314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= |
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Inchange Semiconductor |
Power Transistor Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 5.0 V 1.5 V 50 μA 1 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 7 tf Fall Time tstg Sto |
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Inchange Semiconductor |
2SD1345 duct Specification 2SD1345 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE( |
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Inchange Semiconductor |
Silicon NPN Power Transistors IN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current |
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Inchange Semiconductor |
Silicon NPN Transistor 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 ICBO Collector Cut |
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Desde 2024. D4U Semiconductor.
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