2SD1342 |
Part Number | 2SD1342 |
Manufacturer | Inchange Semiconductor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for... |
Features |
EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
VECF tf
C-E Diode Forward Voltage Fall Time
IF= 5A
IC= 4A, IB1= 0.8A, IB2= 1.6A; RL= 50Ω; VCC= 200V
2SD1342
MIN TYP. MAX UNIT
1500
V
800
V
7
V
5.0
V
1.5
V
10 μA
40
130 mA
8
3
MHz
2.0
V
0.7 μs
NOTICE: ISC reser... |
Document |
2SD1342 Data Sheet
PDF 206.74KB |
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