2SD1351 |
Part Number | 2SD1351 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to... |
Features |
IN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
1.0
V
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
60
300
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
pF
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
3
MHz
Switching Times
ton
Turn-on Time
0.65
μs
tstg
Storage Time
VCC= 30V, RL= 15Ω, IB1= IB2=... |
Document |
2SD1351 Data Sheet
PDF 208.21KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1350 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1350A |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SD1351 |
Thinki Semiconductor |
NPN Complementary Silicon Power Transistors | |
4 | 2SD1352 |
INCHANGE |
NPN Transistor | |
5 | 2SD1353 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SD1354 |
Toshiba |
Silicon NPN Transistor |