2SD1351 Inchange Semiconductor Silicon NPN Power Transistors Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD1351

Inchange Semiconductor
2SD1351
2SD1351 2SD1351
zoom Click to view a larger image
Part Number 2SD1351
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to...
Features IN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 60 300 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 35 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 3 MHz Switching Times ton Turn-on Time 0.65 μs tstg Storage Time VCC= 30V, RL= 15Ω, IB1= IB2=...

Document Datasheet 2SD1351 Data Sheet
PDF 208.21KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD1350
Panasonic Semiconductor
Silicon NPN Transistor Datasheet
2 2SD1350A
Panasonic Semiconductor
Silicon NPN Transistor Datasheet
3 2SD1351
Thinki Semiconductor
NPN Complementary Silicon Power Transistors Datasheet
4 2SD1352
INCHANGE
NPN Transistor Datasheet
5 2SD1353
Toshiba
Silicon NPN Transistor Datasheet
6 2SD1354
Toshiba
Silicon NPN Transistor Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad