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2SD1345 |
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| Part Number | 2SD1345 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe Operation ·Complement to Type 2SB983 ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
emi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) ICBO
Base-Emitter Saturation Voltage Collector Cutoff Current
IC= 4A; IB= 0.4A VCB= 40V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
hFE-2
DC Current Gain
IC= 5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
... |
| Document |
 2SD1345 Data Sheet
PDF 210.68KB |
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Desde 2024. D4U Semiconductor.
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