2SD1390 Inchange Semiconductor Power Transistor Datasheet. existencias, precio

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2SD1390

Inchange Semiconductor
2SD1390
2SD1390 2SD1390
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Part Number 2SD1390
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal d...
Features Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A ICBO Collector Cutoff Current VCB= 750V; IE= 0 VCB= 1500V; IE= 0 5.0 V 1.5 V 50 μA 1 mA hFE DC Current Gain IC= 2A; VCE= 5V 2 7 tf Fall Time tstg Storage Time IC= 2.5A, IBend= 1.1A, LB= 10μH 1 μs 11 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The p...

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