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Inchange Semiconductor |
Silicon PNP Power Transistor CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP D |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT6 |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT6 |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter |
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Inchange Semiconductor |
Silicon PNP Power Transistor 4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL P |
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Inchange Semiconductor |
Silicon PNP Power Transistor 4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL P |
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Inchange Semiconductor |
Silicon PNP Power Transistor 4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92/94/96 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL P |
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Inchange Semiconductor |
Silicon NPN Power Transistor F/93F/95F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDT91F/93F/95F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitt |
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Inchange Semiconductor |
Silicon PNP Power Transistor CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP D |
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Inchange Semiconductor |
Silicon PNP Power Transistor CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP D |
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Inchange Semiconductor |
Silicon PNP Power Transistor CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP D |
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Inchange Semiconductor |
Silicon NPN Power Transistor rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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Inchange Semiconductor |
Silicon NPN Power Transistor rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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Inchange Semiconductor |
Silicon NPN Power Transistor rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDT64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT64 -60 V(BR)CEO Collector-Emitter |
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Inchange Semiconductor |
Silicon NPN Power Transistor F/93F/95F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDT91F/93F/95F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitt |
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Inchange Semiconductor |
Silicon NPN Power Transistor rmal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 1 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise |
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Inchange Semiconductor |
Silicon NPN Power Transistor hermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 6 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT81F/83F/85F/87F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA |
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Inchange Semiconductor |
Silicon NPN Power Transistor hermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 6 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT81F/83F/85F/87F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARA |
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Desde 2024. D4U Semiconductor.
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