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Inchange Semiconductor |
2SD5011 or-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA h |
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Inchange Semiconductor |
2SD1413 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=25mA; IB=0 IC=2A ;IB=4mA IC=2A ;I |
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Inchange Semiconductor |
Power Transistor 1.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 15 40 hFE |
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Inchange Semiconductor |
2SD1308 ollector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff |
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Inchange Semiconductor |
Silicon NPN Power Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter C |
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Inchange Semiconductor |
Silicon NPN Power Transistors TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= |
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Inchange Semiconductor |
2SD428 CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V ICB |
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Inchange Semiconductor |
Silicon NPN Transistor )EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff |
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Inchange Semiconductor |
Power Transistor ollector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V COB Output Capacitance tf Fall Time IE= 0; VCB= 10V; ftest= |
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Inchange Semiconductor |
Silicon NPN Power Transistor otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 30mA 1.5 V ICBO Collector Cutoff Current VCB= 60V; |
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Inchange Semiconductor |
2SD363 (BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage |
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Inchange Semiconductor |
2SD458 fied SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A VBE(sat) Base-Emitter Saturatio |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 1.0 V 1.0 V 100 μA IEBO Emitter Cutoff Current VEB= 7 |
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Inchange Semiconductor |
Silicon NPN Power Transistor ETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50 |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gai |
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Inchange Semiconductor |
Power Transistor er Sustaining Voltage IC= 50mA; L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA ICBO Collector Cutoff |
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Inchange Semiconductor |
Power Transistor uration Voltage IC= 5A; IB= 0.5A VBE(on) Base -Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC |
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Inchange Semiconductor |
Power Transistor ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 130 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA |
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Inchange Semiconductor |
Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Vo |
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Desde 2024. D4U Semiconductor.
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