D428 |
Part Number | D428 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 APPLICATIONS ·Designed for power amplifier applications. ·Recomme... |
Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
COB Output Capacitance
I = 0; V = 10V; f= 1MHzE
CBw w w . D a t a S h e e t . c o . k r
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT 100 V
5V 2.5 V 2... |
Document |
D428 Data Sheet
PDF 109.80KB |
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