Busque con el número de pieza junto con el fabricante o la descripción
2SD897 |
Click to view a larger image
| Part Number | 2SD897 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 1A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust de... |
| Features |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 2A
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
tf
Fall Time
IC= 0.8A, IB1(end)= 0.16A
2SD897
MIN TYP. MAX UNIT
6.0
V
5.0
V
1.5
V
500 μA
8
2.5
V
3
MHz
1.0 μs
NOTICE： ... |
| Document |
 2SD897 Data Sheet
PDF 206.47KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD892 |
Panasonic |
Si NPN Epitaxial Planar Transistor |
|
| 2 | 2SD892A |
Panasonic |
Si NPN Epitaxial Planar Transistor |
|
| 3 | 2SD893 |
Panasonic |
Si NPN Epitaxial Planar Transistor |
|
| 4 | 2SD893A |
Panasonic |
Si NPN Epitaxial Planar Transistor |
|
| 5 | 2SD894 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SD895 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|