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| Part Number | 2SD895 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD895 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB775 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 35W audio frequency output. |
| Features | IC= 30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) ICBO Base -Emitter On Voltage Collector Cutoff Current IC= 1A; VCE= 5V VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Curren. |
| Part Number | 2SD895 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·Complement to type 2SB775 ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 35W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCE. |
| Features | saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;RBE== IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=40V IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 MIN 85 100 6 0.9 www.datasheet4u.com 2SD895 SYM. |
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