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2SD895 |
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| Part Number | 2SD895 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB775 ·Minimum Lot-to-Lot variations for ro... |
| Features |
IC= 30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) ICBO
Base -Emitter On Voltage Collector Cutoff Current
IC= 1A; VCE= 5V VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
I... |
| Document |
 2SD895 Data Sheet
PDF 214.00KB |
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Desde 2024. D4U Semiconductor.
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