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2SD1714 |
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| Part Number | 2SD1714 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
uration Voltage IC= 5A; IB= 0.5A
VBE(on) Base -Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
hFE-3
DC Current Gain
IC= 5A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
2.0
V
1.8
V
50 μA
50 μA
20
60
200
20
90
pF
20
MHz
hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE： ISC reserves the rights to make... |
| Document |
 2SD1714 Data Sheet
PDF 214.45KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1710 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1710 |
MCC |
NPN Silicon Power Transistors |
|
| 3 | 2SD1710 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SD1710 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SD1710A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SD1710C |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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