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2SD2118 |
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| Part Number | 2SD2118 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to... |
| Features |
ETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 20V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= 6V
MIN TYP. MAX UNIT
1.0
V
50
V
20
V
6
V
0.5 uA
0.5 uA
120
390
30
pF
150
MHz
hFE... |
| Document |
 2SD2118 Data Sheet
PDF 227.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD211 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SD211 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SD2110 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD2111 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2111 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2112 |
Inchange Semiconductor |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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