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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.53Ω (typ.) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vol |
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INCHANGE |
N-Channel MOSFET ·Drain Current ID= 7.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.67Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIO |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.41Ω (typ.) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Vol |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 2.4mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 3.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Sw |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤0.67Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤8.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchin |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.7Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.9Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.9Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volta |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.04Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volta |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode a |
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Desde 2024. D4U Semiconductor.
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