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TK8R2A06PL |
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| Part Number | TK8R2A06PL |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8R2A06PL，ITK8R2A06PL ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V,... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 36 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A ... |
| Document |
 TK8R2A06PL Data Sheet
PDF 253.17KB |
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Desde 2024. D4U Semiconductor.
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