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TK8A55DA |
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| Part Number | TK8A55DA |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8A55DA，ITK8A55DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.9Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.9Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.5 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
| Document |
 TK8A55DA Data Sheet
PDF 253.47KB |
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