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TK8Q65W |
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| Part Number | TK8Q65W |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK8Q65W，ITK8Q65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.67Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% av... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.67Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.8 IDM Drain Current-Single Pulsed 31.2 PD Total Dissipation @TC=25℃ 80 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THE... |
| Document |
 TK8Q65W Data Sheet
PDF 229.54KB |
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