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TK8P25DA |
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| Part Number | TK8P25DA |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot v... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 0.5Ω (MAX) ·Enhancement mode: Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 55 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~1... |
| Document |
 TK8P25DA Data Sheet
PDF 277.80KB |
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Desde 2024. D4U Semiconductor.
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