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INCHANGE |
NPN Transistor Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE= 0 IEBO Emitter Cutoff Current V |
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Inchange Semiconductor |
Silicon NPN Power Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-emitter sustaining Voltage IC= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; |
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INCHANGE |
NPN Transistor pecified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 700mA; IC= 0 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat)(1) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current |
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INCHANGE |
Silicon NPN Power Transistor mitter Breakdown Voltage IC= 1mA; IB=B 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 80 100 5 V V V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A 1.0 V V |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gai |
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INCHANGE |
NPN Transistor erwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 MIN TYP. MAX UNIT 50 70 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 50 70 V VCE(sat) Collector-Emitter Saturation |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor down Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= |
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INCHANGE |
PNP Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter |
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Inchange Semiconductor |
Silicon NPN Power Transistor STICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V |
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Inchange Semiconductor |
Silicon NPN Power Transistor age IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A |
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Inchange Semiconductor |
Silicon NPN Power Transistor ge IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A ; VCE= 5V fT Current-Gain—Bandwidth Prod |
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Inchange Semiconductor |
Power Transistor n Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V ICBO Collector C |
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Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0.25 V 1.2 V 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE-1NOTE DC Current Gain IC= 0.2A; VCE= 2V 60 hFE-2NOTE DC Current Gain IC= 0.6A; VCE= 2V 100 400 hFE-3NOTE DC Current Gain IC= 2A; VCE= 2V 50 COB Output Capac |
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INCHANGE |
Silicon NPN Power Transistor ollector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emi |
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INCHANGE |
NPN Transistor T V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V ICBO Collector Cutoff Current VCB= 12 |
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NPN Transistor tor-Emitter Voltage Breakdown IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 130V; IE= 0 ICEO Collector Cutoff Current |
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NPN Transistor ining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE |
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NPN Transistor Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE= 0 IEBO Emitter Cutoff Current V |
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Desde 2024. D4U Semiconductor.
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