2SD1833 INCHANGE Silicon NPN Power Transistor Datasheet. existencias, precio

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2SD1833

INCHANGE
2SD1833
2SD1833 2SD1833
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Part Number 2SD1833
Manufacturer INCHANGE
Description ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device ...
Features ollector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz MIN TYP. MAX UNIT 80 V 100 V 5 V 1.0 V 1.5 V 10 ...

Document Datasheet 2SD1833 Data Sheet
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